Strain-Engineered MOSFETs
| dc.contributor.author | Maiti, C.K. | |
| dc.contributor.author | Maiti, T.K. | |
| dc.date.accessioned | 2020-03-17 03:00:34 | |
| dc.date.accessioned | 2020-04-01T06:50:48Z | |
| dc.date.available | 2020-04-01T06:50:48Z | |
| dc.date.issued | 2012-11-28 | |
| dc.identifier | 1007743 | |
| dc.identifier.uri | http://library.oapen.org/handle/20.500.12657/22437 | |
| dc.description.abstract | This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization. | |
| dc.language | English | |
| dc.subject.classification | thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering | en_US |
| dc.subject.other | Engineering | |
| dc.subject.other | Electrical Engineering | |
| dc.title | Strain-Engineered MOSFETs | |
| dc.type | book | |
| oapen.identifier.doi | 10.1201/9781315216577 | |
| oapen.relation.isPublishedBy | 63ecf019-b273-4b96-9b26-19d50005fba4 | |
| oapen.relation.isFundedBy | b818ba9d-2dd9-4fd7-a364-7f305aef7ee9 | |
| oapen.relation.isbn | 9781466503472 | |
| oapen.relation.isbn | 9781138075603 | |
| oapen.relation.isbn | 9781466500556 | |
| oapen.relation.isbn | 9781315216577 | |
| oapen.collection | Knowledge Unlatched (KU) | |
| oapen.grant.number | 102701 | |
| oapen.grant.program | KU Select 2018: STEM Backlist Books | |
| oapen.identifier.isbn | 9781138075603 | |
| grantor.number | 102701 |
