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        Nanoparticle Engineering for Chemical-Mechanical Planarization

        Proposal review

        Fabrication of Next-Generation Nanodevices

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        Author(s)
        Paik, Ungyu
        Park, Jea-Gun
        Collection
        Knowledge Unlatched (KU); KU Select 2018: STEM Backlist Books
        Language
        English
        Show full item record
        Abstract
        In the development of next-generation nanoscale devices, higher speed and lower power operation is the name of the game. Increasing reliance on mobile computers, mobile phone, and other electronic devices demands a greater degree of speed and power. As chemical mechanical planarization (CMP) progressively becomes perceived less as black art and more as a cutting-edge technology, it is emerging as the technology for achieving higher performance devices. Nanoparticle Engineering for Chemical-Mechanical Planarization explains the physicochemical properties of nanoparticles according to each step in the CMP process, including dielectric CMP, shallow trend isolation CMP, metal CMP, poly isolation CMP, and noble metal CMP. The authors provide a detailed guide to nanoparticle engineering of novel CMP slurry for next-generation nanoscale devices below the 60nm design rule. They present design techniques using polymeric additives to improve CMP performance. The final chapter focuses on novel CMP slurry for the application to memory devices beyond 50nm technology. Most books published on CMP focus on the polishing process, equipment, and cleaning. Even though some of these books may touch on CMP slurries, the methods they cover are confined to conventional slurries and none cover them with the detail required for the development of next-generation devices. With its coverage of fundamental concepts and novel technologies, this book delivers expert insight into CMP for all current and next-generation systems.
        URI
        https://library.oapen.org/handle/20.500.12657/101551
        Keywords
        CMP Process; PAA Concentration; PAA Layer; Polishing Rate; PVP Polymer; Removal Rate; Film Thickness Variation; PVP; PAA Solution; NAND Flash Memory; PAA Chain; Electrokinetic Behavior; Pattern Density; Oxide Film; Ceria Particles; Poly Si Film; Pram; pH Iep; Nitride Film; Poly Si; Removal Depth; Higher Removal Rate; Contact Angle; Abrasive Particles; Nano Fumed Silica Particle
        DOI
        10.1201/9780429291890
        ISBN
        9781000023220, 9781000023220, 9781000006544, 9780367446062, 9781000023299, 9780429291890, 9781000023367, 9781420059113, 9781000019889, 9781000013368
        OCN
        1100491609
        Publisher
        Taylor & Francis
        Publisher website
        https://taylorandfrancis.com/
        Publication date and place
        2019
        Grantor
        • Knowledge Unlatched - [...]
        Imprint
        CRC Press
        Classification
        Electronics engineering
        Materials science
        Industrial chemistry and chemical engineering
        Electrical engineering
        Mathematics and Science
        Pages
        224
        Rights
        https://creativecommons.org/licenses/by-nc-nd/4.0/
        • Imported or submitted locally

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        License

        • If not noted otherwise all contents are available under Attribution 4.0 International (CC BY 4.0)

        Credits

        • logo EU
        • This project received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 683680, 810640, 871069 and 964352.

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