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    Nanoparticle Engineering for Chemical-Mechanical Planarization

    Proposal review

    Fabrication of Next-Generation Nanodevices

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    Author(s)
    Paik, Ungyu
    Park, Jea-Gun
    Collection
    Knowledge Unlatched (KU)
    Language
    English
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    Abstract
    In the development of next-generation nanoscale devices, higher speed and lower power operation is the name of the game. Increasing reliance on mobile computers, mobile phone, and other electronic devices demands a greater degree of speed and power. As chemical mechanical planarization (CMP) progressively becomes perceived less as black art and more as a cutting-edge technology, it is emerging as the technology for achieving higher performance devices. Nanoparticle Engineering for Chemical-Mechanical Planarization explains the physicochemical properties of nanoparticles according to each step in the CMP process, including dielectric CMP, shallow trend isolation CMP, metal CMP, poly isolation CMP, and noble metal CMP. The authors provide a detailed guide to nanoparticle engineering of novel CMP slurry for next-generation nanoscale devices below the 60nm design rule. They present design techniques using polymeric additives to improve CMP performance. The final chapter focuses on novel CMP slurry for the application to memory devices beyond 50nm technology. Most books published on CMP focus on the polishing process, equipment, and cleaning. Even though some of these books may touch on CMP slurries, the methods they cover are confined to conventional slurries and none cover them with the detail required for the development of next-generation devices. With its coverage of fundamental concepts and novel technologies, this book delivers expert insight into CMP for all current and next-generation systems.
    URI
    https://library.oapen.org/handle/20.500.12657/101551
    Keywords
    CMP Process; PAA Concentration; PAA Layer; Polishing Rate; PVP Polymer; Removal Rate; Film Thickness Variation; PVP; PAA Solution; NAND Flash Memory; PAA Chain; Electrokinetic Behavior; Pattern Density; Oxide Film; Ceria Particles; Poly Si Film; Pram; pH Iep; Nitride Film; Poly Si; Removal Depth; Higher Removal Rate; Contact Angle; Abrasive Particles; Nano Fumed Silica Particle
    DOI
    10.1201/9780429291890
    ISBN
    9781000023220, 9781000006544, 9780367446062, 9781000023299, 9780429291890, 9781000023367, 9781420059113, 9781000019889, 9781000013368, 9781000023220
    OCN
    1100491609
    Publisher
    Taylor & Francis
    Publisher website
    https://taylorandfrancis.com/
    Publication date and place
    2019
    Grantor
    • Knowledge Unlatched - [...]
    Imprint
    CRC Press
    Classification
    Electronics engineering
    Materials science
    Industrial chemistry and chemical engineering
    Electrical engineering
    Mathematics and Science
    Pages
    224
    Rights
    https://creativecommons.org/licenses/by-nc-nd/4.0/
    • Imported or submitted locally

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    License

    • If not noted otherwise all contents are available under Attribution 4.0 International (CC BY 4.0)

    Credits

    • logo EU
    • This project received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 683680, 810640, 871069 and 964352.

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