Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications
Proposal review
dc.contributor.editor | Rinaldi, Niccolò | |
dc.contributor.editor | Schröter, Michael | |
dc.date.accessioned | 2022-11-28T16:04:16Z | |
dc.date.available | 2022-11-28T16:04:16Z | |
dc.date.issued | 2018 | |
dc.identifier | ONIX_20221128_9781000794403_34 | |
dc.identifier.uri | https://library.oapen.org/handle/20.500.12657/59750 | |
dc.description.abstract | The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems. | |
dc.language | English | |
dc.subject.classification | thema EDItEUR::P Mathematics and Science::PH Physics::PHD Classical mechanics::PHDY Energy | en_US |
dc.subject.other | Energy | |
dc.title | Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications | |
dc.type | book | |
oapen.identifier.doi | 10.1201/9781003339519 | |
oapen.relation.isPublishedBy | 7b3c7b10-5b1e-40b3-860e-c6dd5197f0bb | |
oapen.relation.isFundedBy | 3983007a-5726-4f1e-b9df-3fbc771f2916 | |
oapen.relation.isbn | 9781000794403 | |
oapen.relation.isbn | 9788793519619 | |
oapen.relation.isbn | 9781003339519 | |
oapen.imprint | River Publishers | |
oapen.pages | 376 | |
oapen.grant.number | [...] | |
peerreview.anonymity | Single-anonymised | |
peerreview.id | bc80075c-96cc-4740-a9f3-a234bc2598f1 | |
peerreview.open.review | No | |
peerreview.publish.responsibility | Publisher | |
peerreview.review.stage | Pre-publication | |
peerreview.review.type | Proposal | |
peerreview.reviewer.type | Internal editor | |
peerreview.reviewer.type | External peer reviewer | |
peerreview.title | Proposal review | |
oapen.review.comments | Taylor & Francis open access titles are reviewed as a minimum at proposal stage by at least two external peer reviewers and an internal editor (additional reviews may be sought and additional content reviewed as required). |