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dc.contributor.authorBabaie, Masoud
dc.contributor.authorShahmohammadi, Mina
dc.contributor.authorStaszewski, Robert Bogdan
dc.date.accessioned2022-11-28T16:04:27Z
dc.date.available2022-11-28T16:04:27Z
dc.date.issued2019
dc.identifierONIX_20221128_9781000794434_38
dc.identifier.urihttps://library.oapen.org/handle/20.500.12657/59757
dc.description.abstractWhile mobile phones enjoy the largest production volume ever of any consumer electronics products, the demands they place on radio-frequency (RF) transceivers are particularly aggressive, especially on integration with digital processors, low area, low power consumption, while being robust against process-voltage-temperature variations. Since mobile terminals inherently operate on batteries, their power budget is severely constrained. To keep up with the ever increasing data-rate, an ever-decreasing power per bit is required to maintain the battery lifetime. The RF oscillator is the second most power-hungry block of a wireless radio (after power amplifiers). Consequently, any power reduction in an RF oscillator will greatly benefit the overall power efficiency of the cellular transceiver. Moreover, the RF oscillators' purity limits the transceiver performance. The oscillator's phase noise results in power leakage into adjacent channels in a transmit mode and reciprocal mixing in a receive mode. On the other hand, the multi-standard and multi-band transceivers that are now trending demand wide tuning range oscillators. However, broadening the oscillator’s tuning range is usually at the expense of die area (cost) or phase noise. The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable. Technical topics discussed in RF CMOS Oscillators for Modern Wireless Applications include:  Design and analysis of low phase-noise class-F oscillators Analyze a technique to reduce 1/f noise up-conversion in the oscillators Design and analysis of low power/low voltage oscillators Wide tuning range oscillators Reliability study of RF oscillators in nanoscale CMOS
dc.languageEnglish
dc.subject.classificationthema EDItEUR::P Mathematics and Science::PH Physics::PHD Classical mechanics::PHDY Energyen_US
dc.subject.classificationthema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJK Communications engineering / telecommunications::TJKT Telephone technology::TJKT1 Mobile phone technologyen_US
dc.subject.otherEnergy
dc.subject.otherMobile phone technology
dc.titleRF CMOS Oscillators for Modern Wireless Applications
dc.typebook
oapen.identifier.doi10.1201/9781003339311
oapen.relation.isPublishedBy7b3c7b10-5b1e-40b3-860e-c6dd5197f0bb
oapen.relation.isFundedBy3983007a-5726-4f1e-b9df-3fbc771f2916
oapen.relation.isbn9781000794434
oapen.relation.isbn9788793609495
oapen.relation.isbn9781003339311
oapen.imprintRiver Publishers
oapen.pages222
oapen.grant.number[...]
peerreview.anonymitySingle-anonymised
peerreview.idbc80075c-96cc-4740-a9f3-a234bc2598f1
peerreview.open.reviewNo
peerreview.publish.responsibilityPublisher
peerreview.review.stagePre-publication
peerreview.review.typeProposal
peerreview.reviewer.typeInternal editor
peerreview.reviewer.typeExternal peer reviewer
peerreview.titleProposal review
oapen.review.commentsTaylor & Francis open access titles are reviewed as a minimum at proposal stage by at least two external peer reviewers and an internal editor (additional reviews may be sought and additional content reviewed as required).


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